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Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

Published online by Cambridge University Press:  16 February 2011

D. E. Aspnes,
R. Bhat,
E. Colas,
L. T. Florez,
S. Gregory,
J. P. Harbison,
I. Kamiya,
W. E. Quinn,
S. A. Schwarz and
H. Tanaka
...Show all authors
D. E. Aspnes
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
E. Colas
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
L. T. Florez
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
S. Gregory
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
J. P. Harbison
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
I. Kamiya
Affiliation:
University of Illinois Urbana-Champaign, Urbana, IL 61801 USA
W. E. Quinn
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
S. A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701–7040 USA
H. Tanaka
Affiliation:
Fujitsu Laboratories Ltd., Atsugi 243-01, JAPAN
M. Wassermeier
Affiliation:
University of California, Santa Barbara, CA 93106
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Abstract

A variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. New capabilities for surface analysis are being provided by developing techniques such as reflectance-difference spectroscopy (RDS), which use intrinsic symmetries to suppress ordinarily dominant bulk contributions. Bulk and microstructural properties such as compositions and layer thicknesses can be determined by techniques such as spectroellipsometry (SE), which return information integrated over the penetration depth of light. Recent advances include the application of reflectance to monitor dynamic surface processes, RDS to characterize (001) GaAs surfaces in OMCVD environments, and SE to control growth of AlxGa1-x, As materials and structures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991, 63
Copyright
Copyright © Materials Research Society 1991

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References

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