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Recent Advances in Wet Processing Technology and Science

Published online by Cambridge University Press:  15 February 2011

Steven Verhaverbeke,
Rochdi Messoussi,
Hitoshi Morinaga and
Tadahiro Ohmi
Steven Verhaverbeke
Affiliation:
Tohoku University, Sendai, Japan
Rochdi Messoussi
Affiliation:
Tohoku University, Sendai, Japan
Hitoshi Morinaga
Affiliation:
Tohoku University, Sendai, Japan
Tadahiro Ohmi
Affiliation:
Tohoku University, Sendai, Japan
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Extract

For the cleaning of silicon substrates, a mixture of an oxidizing and an etching agent is often used. One of the first successful mixtures (1970) is the well known APM or SC-1 cleaning (NH4OH/H2O2/H2O) (1). Since then, other mixtures (oxidizing agent/etching agent) such as HNO3/HF (2), H2O2/HF (3) were developed. For the cleaning of silicon substrates, a mixture of an oxidizing agent and an etching agent always results in good particle performance, since the Si under the particles is continuously oxidized and etched simultaneously (2,3).

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References

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