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Recent Developments in Doping Techniques for Compound Semiconductors

Published online by Cambridge University Press:  22 February 2011

J. E. Cunningham and
W. T. Tsang
J. E. Cunningham
Affiliation:
AT&T Bell Labs Holmdel, NJ
W. T. Tsang
Affiliation:
AT&T Bell Labs, Murray Hill, NJ
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Abstract

We report new methods to dope compound semiconductors. First, we demonstrate the concept of doping engineering whereby it becomes possible to tailor the activation energy of the dopant in a host semiconductor for the first time. In this application, the band offset of a thin, sacrificial semiconductor is used to lower the activation energy of the dopant below its value in the host semiconductor. This allows the freedom to control dopant activity in ways not accessible to a uniformly placed dopant. We chose δ-Be-AlGaAs/GaAs as a model example and show the hole binding energy is reduced by a factor of five. Secondly, we demonstrate overcoming the p-type solubility limit in GaAs by use of monolayer δ-Be in a GaAs base of an HBT. Here, an effective hole concentration of > 1021cm−3 is measured in real devices. We present a qualatative view of doping solubility limitations that are controlled by surface processes.

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