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Recent Progress in Gan Based Field Effect Transistors

Published online by Cambridge University Press:  10 February 2011

M. A. Khan ,
Q. Chen ,
C. J. Sun ,
J. W. Yang  and
M. S. Shur
M. A. Khan
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
Q. Chen
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
C. J. Sun
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
J. W. Yang
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
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Abstract

Most types of GaN based Field Effect Transistors – MESFETs, MISFETs, Heterostructure FETs (HFETs), and Doped Channel HFETs (DC-HFETs) have demonstrated a good performance at both room temperature and elevated temperatures. The DC-HFETs demonstrated the best direct current and microwave characteristics among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. Other advantages of GaN-based materials for FET applications include a very high breakdown field, a very high saturation field, a high peak velocity, a large conduction and valence band discontinuities at the AlN-GaN heterointerface, and a reasonable thermal conductivity (comparable to that of Si). In this paper, we review our recent results obtained for different types of GaN-based transistors.

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References

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