Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-12T20:31:54.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Recent Progress in Microcrystalline Semiconductor Thin Films

Published online by Cambridge University Press:  15 February 2011

K. Tanaka
K. Tanaka*
Affiliation:
Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki 305, tanaka@jrcat.or.jp
Get access

Abstract

Nanocrystalline/microcrystalline thin films prepared at relatively low temperatures by plasma-enhanced chemical vapor deposition (PECVD), in particular hydrogenated microcrystalline Si films (μc-Si:H), have attracted an increasing attention not only as potential materials for thin film solar cells, but also as active layers in thin film transistor arrays for flat panel displays. This paper reviews recent progress in the investigation of these materials; preparation methods, structural and optical properties, and electronic transports. Emphasis is placed on the understanding of the growth mechanism of μc-Si:H films as well as the microscopic characterization of the film structure.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996, 3
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Veprek, S. and Marecek, V., Solid-State Electronics 11, 683 (1968).Google Scholar
2.Spear, W. E. and LeComber, P.G., Solid State Commun. 17, 1193 (1975).Google Scholar
3.Usui, S. and Kikuchi, M., J. Non-cryst. Solids 34, 1 (1979).Google Scholar
4.Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., Iizima, S., Matsumura, M. and Yamamoto, H., Jpn J. Appl. Phys. 19, L305 (1980).Google Scholar
5.Tanaka, K., Nakagawa, K., Matsuda, A., Matsumura, M., Yamamoto, H., Yamasaki, S., Okushi, H. and Iizima, S., Jpn J. Appl. Phys. 20, Suppl. 20–1, 267 (1981).Google Scholar
6.Materials Issues in Microcrystalline Semiconductors, edited by Fauchet, P.M., Tanaka, K., and Tsai, C.C. (Mater. Res. Soc. Proc. 164, Pittsburgh, PA 1990);Google Scholar
Amorphous & Microcrystalline Semiconductor Devices Vol. 11: Materials and Device Physics, edited by Kanicki, J. (Artech House, Norwood, MA 1992);Google Scholar
Microcrystalline Semiconductors: Materials Science & Devices, edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I., and Aoyagi, Y. (Mater. Res. Soc. Proc. 283, Pittsburgh, PA 1993);Google Scholar
Microcrystalline and Nanocrystalline Semiconductors, edited by Collins, R.W., Tsai, C.C., Hirose, M., Koch, F., and Brus, L. (Mater. Res. Soc. Proc. 358, Pittsburgh, PA 1995).Google Scholar
7.Feng, G.F., Katiyar, M., Yang, Y.H., Abelson, J.R. and Maley, N. in ref. [6] (Mater. Res. Soc. Proc. 283, Pittsburgh, PA 1993), p. 501.Google Scholar
8.Hanna, J., Ohuchi, T. and Yamamoto, M., J. Non-cryst. Solids 198–200, 879 (1996).Google Scholar
9.Toet, D., Eitel, S., Santos, P.V. and Heintze, M., J. Non-cryst. Solids 198–200, 887 (1996).Google Scholar
10.Tanaka, M., Tsuge, S., Kiyama, S., Tsuda, S. and Nakano, S. (this volume).Google Scholar
11.Matsuda, A., Kumagai, K. and Tanaka, K., Jpn J. Appl. Phys. 22, L34 (1983).Google Scholar
12.Ikuta, K., Toyoshima, Y., Yamasaki, S., Matsuda, A. and Tanaka, K., J. Non-cryst. Solids 198–200, 863 (1996).Google Scholar
13.Hapke, P., Finger, F., Luysberg, M., Carius, R. and Wagner, H., in ref. [6] (Mater. Res. Soc. Proc. 358, Pittsburgh, PA 1995), p. 745:Google Scholar
Finger, F., Carius, R., Hapke, P., Houben, L., Luysberg, M. and Tzolov, M. (this volime).Google Scholar
14.Scheib, M., Schroder, B. and Oechsner, H., J. Non-cryst. Solids 198–200, 895 (1996).Google Scholar
15.Imajyo, N., J. Non-cryst. Solids 198–200, 935 (1996).Google Scholar
16.Miyamoto, Y., Miita, J. and Shimizu, I. (this volume).Google Scholar
17.Parsons, G. N., Tsu, D.V. and Lucovsky, G., J. Non-cryst. Solids 97&98, 1375 (1987).Google Scholar
18.Rath, J.K., Feenstra, K.F., Ruff, D., Meiling, H. and Schropp, R. (this volume).Google Scholar
19.Asano, A., Appl. Phys. Lett. 56, 533 (1990).Google Scholar
20.Nomoto, K., Urano, Y., Guizot, J.L., Ganguly, G. and Matsuda, A., Jpn J. Appl. Phys. 29, L1372 (1990).Google Scholar
21.Parsons, G.N., Boland, J.J. and Tsang, J.C., Jpn J. Appl. Phys. 31, 1943 (1992).Google Scholar
22.Roca i Cabarrocas, P., Layadi, N., Drevillon, B. and Solomon, I., J. Non-cryst. Solids 198–200, 871 (1996).Google Scholar
23.Matsuda, A., Yoshida, T., Yamasaki, S. and Tanaka, K., Jpn J. Appl. Phys. 20, L439 (1981).Google Scholar
24.Hapke, P., Luysberg, M., Carius, R., Tzolov, M., Finger, F. and Wagner, H., in Proc. of POLYSE '95 (Gargano, Italy, 1995) (in press).Google Scholar
25.Baedet, E., Bouree, J.E., Cuniot, M., Dixmier, J., Elkaim, P., Le Duigou, J., Middya, A.R. and Perrin, J., J. Non-cryst. Solids 198–200, 867 (1996).Google Scholar
26.Nguyen, H.V., An, Ilsin, Collins, R.W., Lu, Y., Wakagi, M. and Wronski, C.R., Appl. Phys. Lett. 65, 3335 (1994).Google Scholar
27.Drevillon, B., Solomon, I. and Fang, M. in ref. [6] (Mater. Res. Soc. Proc. 283, Pittsburgh, PA 1993) p. 455.Google Scholar
28.Iqbal, Z. and Veprek, S., J. Phys. C: Solid State Phys. 15, 377 (1982).Google Scholar
29.Richter, H., Wang, Z.P. and Ley, L., Solid State Commun. 39, 625 (1981).Google Scholar
30.Tsu, R., Gonzalez-Hernandez, J., Chao, S.S., Lee, S.C. and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).Google Scholar
31.Campbell, I.H. and Fauchet, P.M., Solid State Commun. 58, 739 (1986).Google Scholar
32.Nemanich, R.J., Buehler, E.C., Legrice, Y.M., Shroder, R.E., Parsons, G.N., Wang, C., Lucovsky, G. and Boyce, J.B., J. Non-cryst. Solids 114, 813 (1989).Google Scholar
33.Hiraki, A., Imura, T., Mogi, K. and Tashiro, M., J. De Physique C4 supplement, Tome 42, C4–277 (1981).Google Scholar
34.Tanaka, K. and Hayashi, S. in Glow-Discharge Hvdrogenated Amorphous Silicon, edited by Tanaka, K. (KTK, Tokyo / Kluwer, Dordrecht, 1989) p. 39–70.Google Scholar
35.Hayashi, S., Hayamizu, K., Yamasaki, S., Matsuda, A. and Tanaka, K., Phys. Rev. B35, 4581 (1987):Google Scholar
Hayashi, S., Hayamizu, K., Yamasaki, S., Matsuda, A. and Tanaka, K., J. Appl. Phys. 56, 2658 (1984).Google Scholar
36.Malten, C., Finger, F., Hapke, P., Kulessa, T., Walker, C., Carius, R., Fluckiger, R. and Wagner, H. in ref. [6] (Mater. Res. Soc. Proc. 358, Pittsburgh, PA 1995) p. 757.Google Scholar
37.Zhou, J.H., Yamasaki, S., Isoya, J., Dcuta, K., Kondo, M., Matsuda, A. and Tanaka, K. (this volume).Google Scholar
38.Matsuda, A., J. Non-cryst. Solids 59–60, 767 (1983).Google Scholar
39.Spear, W.E., Willeke, G., LeComber, P.G. and Fitzgerald, A.G., J. De Physique C4 Supplement, Tome 42, C4–257 (1981).Google Scholar
40.lucovsky, G., Wang, c., Williams, M.J., Chen, Y.L. and Maher, D.M. in ref. [6] (Mater. Res. Soc. Proc. 283, Pittsburgh, PA 1993) p. 443.Google Scholar
41.Otobe, M. and Oda, S. in ref. [6] (Mater. Res. Soc. Proc. 283, Pittsburgh, PA, 1993) p. 519.Google Scholar
42.He, Y., Chu, Y., Lin, H. and Qin, G. in ref. [6] (Mater. Res. Soc. Proc. 283, Pittsburgh, PA 1993) p. 537.Google Scholar
43.Hamma, S. and Roca i Cabarrocas, P., Thin Solid Films (in press).Google Scholar
44.Collins, R.W. and Yang, B.Y., J. Vac. Sci. Technol. B7, 1155 (1989).Google Scholar
45.Wagner, S., Wolffand, S.H.Gibson, J.M. in ref. [6] (Mater. Res. Soc. Proc. 164, Pittsburgh, PA 1990) p. 161.Google Scholar
46.Overhof, H. and Otte, M. in Proc, of International Symposium on Condensed Matter Physics (ISCMP '96) (Varna. 1996) (in press).Google Scholar
47.Veprek, S., Sarrot, F.A., Rambert, S. and Taglauer, E., J. Vac. Sci. Tech. A7, 2614 (1989).Google Scholar
48.Heintze, M., Westlake, W. and Santos, P.V., J. Non-cryst. Solids 164–166, 985 (1993).Google Scholar
49.Matsuda, A. and Goto, T. in ref. [6] (Mater. Res. Soc. Proc. 164, Pittsburgh, PA 1990) p. 3.Google Scholar
50.Nakamura, K., Yoshino, K., Takeoka, S. and Shimizu, I., Jpn J. Appl. Phys. 34, 442 (1995) and references therein.Google Scholar
51.Matsuda, A. and Tanaka, K., Thin Solid Films 92, 171 (1982).Google Scholar
52.Kondo, M., Toyoshima, Y., Matsuda, A. and Ikuta, K., J. Appl. Phys. 80, 6061 (1996).Google Scholar
53.Persons, G.N., Appl. Phys. Lett. 59, 2546 (1991).Google Scholar
54.Boland, J.J. and Persons, G.N., Science 256, 1304 (1992).Google Scholar
55.Ikuta, K., Park, J.W., Kuo, L.H., Yasuda, T., Yamasaki, S. and Tanaka, K. (this volume).Google Scholar
56.Yang, Y.H., Katiyar, M., Feng, G.F., Maley, N. and Abelson, J.R., Appl. Phys. Lett. 65, 1769 (1994).Google Scholar
57.Toyoshima, Y., Arai, K., Matsuda, A. and Tanaka, K., J. Non-cryst. Solids 137&138, 765 (1991).Google Scholar
58.Beyer, W. and Zastrow, U. in Amorphous Silicon Technology -1996. edited by Hack, A., Schiff, E.A., Wagner, S., Matsuda, A. and Schropp, R. (Mater. Res. Soc. Proc, Pittsburgh, PA 1996, in press).Google Scholar
59.Santos, P.V., Johnson, N.M. and Street, R.A., Phys. Rev. Lett. 67, 2686 (1991).Google Scholar
60.Yamasaki, S., Umeda, T., Isoya, J. and Tanaka, K., Appl. Phys. Lett. (1997, in press).Google Scholar
61. unpublished data, Yamasaki, S. et al. Google Scholar
62.Shimizu, I., J. Non-cryst. Solids 114, 145 (1989).Google Scholar
63.Richterand, H.Ley, L., J. Appl. Phys. 52, 7281 (1981).Google Scholar
64.Krankenhagen, R., Schmidt, M., Grebner, S., Poscherieder, M., Henrion, W., Sieber, I., Koynov, S. and Schwarz, R., J. Non-cryst. Solids 198–200, 923 (1996).Google Scholar
65.Beck, N., Meier, J., Fric, J., Remes, Z., Poruba, A., Fluckiger, R., Pohl, J., Shar, A. and Vanecek, M., J. Non-cryst. Solids 198–200, 903 (1996):Google Scholar
Beck, N., Torres, P., Fric, J., Remes, Z., Poruba, A., Stuchlikova, Ha, Fejfar, A., Wyrsch, N., Vanecek, M., Kocka, J. and Shar, A. (this volume).Google Scholar
66.Hybertsen, M.S., Phys. Rev. Lett. 72, 1514 (1994).Google Scholar
67.Wang, L.W. and Zunger, A., J. Phys. Chem. 98, 2158 (1994).Google Scholar
68.Nguyen, H.V., Kim, S., Lu, Y., Wakagi, M. and Collins, R.W., J. Non-cryst. Solids 198–200, 853 (1996).Google Scholar
69.Liu, X-N., Wu, X-W., Bao, X-M. and He, Y-L., Appl. Phys. Lett. 64, 220 (1994).Google Scholar
70.Hapke, P., Finger, F., Carius, R., Wagner, H., Prasad, K. and Fluckiger, R., J. Non-cryst. Solids 164–166, 981 (1993).Google Scholar
71.Finger, F., Hapke, P., Luysberg, M., Carius, R. and Wagner, H., Appl. Phys. Lett. 65, 2588 (1994).Google Scholar
72.Overhof, H. and Beyer, W., Philos. Magazine B 47, 377 (1983).Google Scholar
73.Meyer, W. and Neldel, H., Z. Techn. Physik. 18, 588 (1937).Google Scholar
74.Lucovsky, G. and Overhof, H., J. Non-cryst. Solids 164–166, 973 (1993).Google Scholar
75.Willeke, G. in Amorphous & Microcrystalline Semiconductor Devices Vol.11 : Materials and Device Physics, edited by Kanicki, J. (Artech House, Norwood, MA 1992) p. 55.Google Scholar
76.Overhof, H. and Thomas, P. in Electronic Transport in Hvdrogenated Amorphous Silicon, Springer Tracts in Modern Physics Vol. 114 (Springer Verlag, Heidelberg, 1989).Google Scholar
77.Kondo, M., Chida, Y. and Matsuda, A., J. Non-cryst. Solids 198–200, 178 (1996).Google Scholar