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Relation Between Structure and Carrier Lifetime in As-Implanted GaAs

Published online by Cambridge University Press:  26 February 2011

Z. Liliental-Weber,
W. Swider,
H. Kagiichi,
A. Claverie,
H. H. Wang and
J. F. Whitaker
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory 62/203, Berkeley, CA 94720,
W. Swider
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory 62/203, Berkeley, CA 94720,
H. Kagiichi
Affiliation:
University of California, Berkeley, CA 94720,
A. Claverie
Affiliation:
CEMES-LOE/CNRS, BP 4347, F-31055, Toulouse Cedex, France, Department of Materials Science
H. H. Wang
Affiliation:
Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109
J. F. Whitaker
Affiliation:
Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109
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Abstract

The structure of As implanted GaAs layers before and after annealing are described and the relation between the structural quality and carrier lifetime was determined. Subpicosecond carrier lifetimes were found already for as-implanted layers, and this value changes only slightly after annealing in the temperature range up to 600°C. Annealing of As-implanted layers leads to the growth of As precipitates with a similar orientation relationship as those observed in low-temperature MBE-grown GaAs layers. However, it is still not clear whether point defects created by implantation or the As precipitates are responsible for the short carrier lifetime.

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