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Relationship Between Strained Silicon-Oxygen Bonds and Radiation Induced Paramagnetic Point Defects in Silicon Dioxide

Published online by Cambridge University Press:  28 February 2011

W.L. Warren,
P.M. Lenahan,
C.J. Brinker and
C.S. Ashley
W.L. Warren
Affiliation:
The Pennsylvania State University., University Park, PA 16802Sandia National Laboratories, Albuquerque, NM 87185
P.M. Lenahan
Affiliation:
The Pennsylvania State University., University Park, PA 16802
C.J. Brinker
Affiliation:
The Pennsylvania State University., University Park, PA 16802Sandia National Laboratories, Albuquerque, NM 87185
C.S. Ashley
Affiliation:
The Pennsylvania State University., University Park, PA 16802Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm−1 D2 “defect” band attributed to cyclic trisiloxanes (3 membered rings). Our results indicate that strained silicon-oxygen bonds due to three membered rings are the dominant E΄ (trivalent silicon center) and paramagnetic oxygen center precursors at high irradiation doses for silicates containing large concentrations of the D2 species. These results directly demonstrate that atomic level stress does play a role in the radiation damage process of silicon dioxide.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 180: Symposium A – Better Ceramics Through Chemistry IV , 1990, 247
Copyright
Copyright © Materials Research Society 1990

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