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Relaxation of Metastable Semiconductor Strained-Layer Structures by Plastic Flow

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson and
Jeffrey Y. Tsao
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
Jeffrey Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

The relaxation of misfit strain in metastable structures by plastic flow is described using a continuum model based on Haasen's picture of plastic flow in bulk diamond-phase semiconductors and the concept of excess stress. This model provides a unified explanation of the equilibrium critical thickness, the relaxation behavior of metastable strained-layer structures, and the “metastable” critical thicknesses reported in many semiconductor strained-layer geometries.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987, 199
Copyright
Copyright © Materials Research Society 1988

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References

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