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Residual Defects in Virgin and Implanted Si After Laser Processing+

Published online by Cambridge University Press:  15 February 2011

A. Mesli,
A. Goltzene,
J.C. Muller,
B. Meyer,
C. Schwab and
P. Siffert
A. Mesli
Affiliation:
Centre de Recherches Nucléaires - Département PHASE - B.P. 20 CR - Rue du loess - 67037 STRASBOURG Cedex, France
A. Goltzene
Affiliation:
Laboratoire de Spectroscopie et d'Optique du Corps Solide, Associé au C.N.R.S. n° 232 - Université Louis Pasteur -5, rue de l'Université - 67000 STRASBOURG, France
J.C. Muller
Affiliation:
Centre de Recherches Nucléaires - Département PHASE - B.P. 20 CR - Rue du loess - 67037 STRASBOURG Cedex, France
B. Meyer
Affiliation:
Laboratoire de Spectroscopie et d'Optique du Corps Solide, Associé au C.N.R.S. n° 232 - Université Louis Pasteur -5, rue de l'Université - 67000 STRASBOURG, France
C. Schwab
Affiliation:
Laboratoire de Spectroscopie et d'Optique du Corps Solide, Associé au C.N.R.S. n° 232 - Université Louis Pasteur -5, rue de l'Université - 67000 STRASBOURG, France
P. Siffert
Affiliation:
Centre de Recherches Nucléaires - Département PHASE - B.P. 20 CR - Rue du loess - 67037 STRASBOURG Cedex, France
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Abstract

EPR, photocarrier cyclotron resonance and DLTS measurements have been performed on laser-annealed Si wafers.

In virgin Si, an isotropic EPR line at g1 = 2.0055± 0.0005 and a carrier lifetime decrease, assessed by cyclotron resonance, are correlated to the creation of vacancy complexes associated to Oxygen.

In implanted Si, only defects due to the tailing effect of implantation process are observed by DLTS. These levels can be divided into two groups, one of them is stronglycorrelated with the implanted parameter. They are ascribed to primary or complex associations of point defects.

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Footnotes

+

Part of this work has been performed under COMES-PIRDES contract.

References

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