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A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories

Published online by Cambridge University Press:  21 February 2011

R. B. Sethi,
R. P. Ciari,
L. Anderson,
U. S. Kim and
A. Bergemont
R. B. Sethi
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
R. P. Ciari
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
L. Anderson
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
U. S. Kim
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
A. Bergemont
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
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Abstract

A robust 6" hotwall flatzone nitride system is developed for scaled ONO interpoly. dielectric application in a high density EPROM memory cell. This system is designed to operate at low temperature (660° C) and gas ratio (4:1 NH3: DCS) with integrated silicon carbide components. The obtained key features are low defects (0.25 #/cm2 particles), smooth topography (measured by atomic force microscopy) and superior electrical interface as measured by electrical and optical methods.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993, 383
Copyright
Copyright © Materials Research Society 1993

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References

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