Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-15T23:10:15.598Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky-Diodes in Laser Recrystallized Polysilicon

Published online by Cambridge University Press:  15 February 2011

H. Schaber,
H. Schelpmeier,
W.M. Werner and
D. Cutter
H. Schaber
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G.
H. Schelpmeier
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G.Siemens AG, Unternehmensbereich Bauelemente, Balanstr., 73, 8 München 80, F.R.G.
W.M. Werner
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G.Siemens AG, Unternehmensbereich Bauelemente, Balanstr., 73, 8 München 80, F.R.G.
D. Cutter
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G.
Get access

Abstract

Schottky-diodes on laser recrystallized polycrystalline silicon are studied and compared to diodes fabricated on conventional, fine grained poly-Si. A strong dependence of reverse current on grain size is found and can be quantitatively explained by carrier generation at grain boundaries. In order to reduce the series resistance of the diodes, various methods to create a n+n doping profile in the recrystallized layer are investigated.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

/ 1 / Gat, A. et al. , Appl. Phys. Lett. 33, 775 (1978).CrossRefGoogle Scholar
/ 2 / see e.g.: Gibbons, James F. in “Laser and Electron Beam Solid Interactions and Materials Processing”, edited by Gibbons, J.F., Hess, L.D., and Sigmon, T.W. (North Holland, New York, 1981) p. 449.Google Scholar
/ 3 / De Jong, Glenn A. et al. , ECS Extended Abstracts 80–2, 1201 (1980).Google Scholar
/ 4 / Werner, W.M., ECS Extended Abstracts 79–1, 456 (1979).Google Scholar
/ 5 / Sze, S.M., “Physics of Semiconductor Devices”, p. 389.Google Scholar
/ 6 / Card, H.C. and Hwang, W., IEEE Transactions on Electron Devices ED–27, 700 (1980).CrossRefGoogle Scholar
/ 7 / Ghosh, A.K. et al. , J. Appl. Phys. 51, 446 (1980).CrossRefGoogle Scholar
/ 8 / Lu, N.C.C. et al. , IEEE Electron Device Letters EDL–1, 38 (1980).CrossRefGoogle Scholar
/ 9 / Lee, K.F. et al. in “Laser and Electron Beam Processing of Materials”, edited by White, C.W. and Peercy, P.S. (Academic Press, New York, 1980), p. 632.CrossRefGoogle Scholar