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Segregation and Crystallization Phenomena in Germanium

Published online by Cambridge University Press:  15 February 2011

G. J. Clark,
A. G. Cullis,
D. C. Jacobson,
J. M. Poate and
Michael O. Thompson
G. J. Clark
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA
A. G. Cullis
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, England
D. C. Jacobson
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974 USA
J. M. Poate
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974 USA
Michael O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

While many studies have been made of liquid phase epitaxy impurity trapping and segregation in Si little is known about the equivalent processes in Ge. In this paper we have laser annealed Ge <100> and <111> crystals implanted, at liquid nitrogen temperature, with 200 keV 210Bi ions to doses of 2 × 1015 and 1016 ions cm−2. The samples were annealed with Q-switched ruby lasers and an XeCl excimer laser. We have observed 1) velocity and orientation dependence of the Bi segregation coefficient 2) interface instability and cell formation resulting from constitutional supercooling and 3) amorphization and defect production at high velocities. The phenomena are shown to be analogous to those seen in Si.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982, 303
Copyright
Copyright © Materials Research Society 1983

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References

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