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Selective Area Epitaxy for Optoelectronic Devices

Published online by Cambridge University Press:  22 February 2011

H. Temkin,
R. A. Hamm,
A. Feygenson,
M. A. Cotta,
L. R. Harriott,
D. Ritter and
Y. L. Wang
H. Temkin
Affiliation:
Electrical Engineering Department, Colorado State University, Ft. Collins C080523
R. A. Hamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. Feygenson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. A. Cotta
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. R. Harriott
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. Ritter
Affiliation:
Solid State Institute, Technion, Haifa, Israel
Y. L. Wang
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan
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Abstract

We discuss the characteristics of MOMBE based selective area epitaxy useful in the preparation of optoelectronic devices. Selective area epitaxy, a process in which epitaxy is restricted only to the areas opened in a suitably prepared dielectric mask, offers a powerful method of preparing high performance devices, varying the thickness and composition of the grown layers simply by controlling the width of the open areas and monolithically integrating different device types on common substrates. Lasers, heterostructure bipolar transistors, and optoelectronic integrated circuits based on InGaAs/InP system and relying on selective area epitaxy are described.

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References

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