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Self-Diffusion in Compound Semiconductors

Published online by Cambridge University Press:  15 February 2011

Arthur F.W. Willoughby
Arthur F.W. Willoughby*
Affiliation:
Engineering Materials Laboratories, The.University, Southampton, SO9 5NH, U.K.
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Abstract

Self-diffusion studies are vital in the elucidation of atomic mechanisms of diffusion; as well as in the better understanding of device fabrication processes, such as the annealing of ion-implanted layers. This review outlines first the major reasons for interest in self-diffusion in III–V and II–VI compounds. It discusses the main differences with elemental semiconductors, including the wide variety of possible defects in the compounds, the role of departures from stoichiometry, and the value of tracer and interdiffusion studies. Self-diffusion studies in III–V compounds are next reviewed, including recent measurements in GaAs, where more information on diffusion mechanisms is becoming available. Interdiffusion between different III–V compounds is also discussed in the light of self-diffusion studies. Next, recent progress on self-diffusion in certain II–VI compounds is discussed, where interdiffusion studies have also provided a significant contribution. The review concludes by suggesting areas where research is urgently needed to clarify diffusion mechanisms.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 237
Copyright
Copyright © Materials Research Society 1982

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