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Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon Layer

Published online by Cambridge University Press:  21 March 2011

Yukio Nakabayashi,
Hirman I. Osman,
Toru Segawa,
Kazunari Toyonaga,
Satoru Matsumoto,
Junichi Murota,
Kazumi Wada and
Takao Abe
Yukio Nakabayashi
Affiliation:
Keio Univ., Dept. of Electronics and Electrical Engineering, Yokohama, JAPAN
Hirman I. Osman
Affiliation:
Keio Univ., Dept. of Electronics and Electrical Engineering, Yokohama, JAPAN
Toru Segawa
Affiliation:
Keio Univ., Dept. of Electronics and Electrical Engineering, Yokohama, JAPAN
Kazunari Toyonaga
Affiliation:
Keio Univ., Dept. of Electronics and Electrical Engineering, Yokohama, JAPAN
Satoru Matsumoto
Affiliation:
Keio Univ., Dept. of Electronics and Electrical Engineering, Yokohama, JAPAN
Junichi Murota
Affiliation:
Tohoku Univ. Res. Inst. of Electrical Communication, Sendai, JAPAN
Kazumi Wada
Affiliation:
Massachusetts Institute of Technology, Dept. of MS&E, Cambridge
Takao Abe
Affiliation:
Sin-Etsu Handootai, Isobe R&D Center, Gunma, JAPAN
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Abstract

Silicon self–diffusion coefficients were measured in intrinsic and extrinsic silicon from870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si isobtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

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