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Sem and Aes Analysis of Ion Implanted Graphite

Published online by Cambridge University Press:  15 February 2011

M. Shayegan,
B.S. Elman,
H. Mazurek,
M.S. Dresselhaus and
G. Dresselhaus
M. Shayegan
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
B.S. Elman
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
H. Mazurek
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
M.S. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
G. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Abstract

Ion-implantation of graphite is characterized with respect to lattice damage and the distribution of implanted ions. Both the depth profile of the implanted ions and of the lattice damage are shown to follow the models previously developed for ion-implanted semiconductors. Auger electron spectroscopy (AES) is used to monitor the implantation profile. The surface damage is examined by scanning electron microscopy (SEM) while microcrystalline regions in an amorphous background are observed by scanning transmission electron microscopy (STEM).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981, 417
Copyright
Copyright © Materials Research Society 1982

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Footnotes

†

Department of Electrical Engineering and Computer Science

*

Center for Materials Science and Engineering

§

Department of Physics

Francis Bitter National Magnet Laboratory, supported by NSF.

References

REFERENCES

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