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Semiconductor Device research Using Non-Lattice Matched Structures

Published online by Cambridge University Press:  21 February 2011

Jerry M. Woodall
Jerry M. Woodall*
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218 Yorktown, NY 10598
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Abstract

Heterojunctions are ubiquitous to compound semiconductor devices. They are used for both device function and are remedial for problems associated with Fermi level pmining. In the past lattice matching was a critical feature for success. Most devices were made using either the GaAIAs/GaAs or InP/GalnAsP systems. Recently, there have been breakthroughs in the fabrication of devices using non-lattice-matched systems. These include high speed devices made of GaAs grown on Si, InGaAs/GaAs high speed and optoclectronic devices, infra-red photodetectors made of GaInAs grown on GaAs and GeSi/Si strained-layer superlattices. This talk will review this progress and discuss some of the materials and epitaxy issues likely to affect future trends in device research using non-latticematched layers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 3
Copyright
Copyright © Materials Research Society 1988

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References

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