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Shallow and Deep Level Defects in GaN

Published online by Cambridge University Press:  21 February 2011

W. Götz,
N.M. Johnson,
D.P. Bour,
C. Chen,
H. Liu,
C. Kuo and
W. Imler
W. Götz
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
N.M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
D.P. Bour
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
C. Chen
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
H. Liu
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
C. Kuo
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
W. Imler
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
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Abstract

Shallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at ∼Ec - 0.02 eV and was found to be the dominant donor impurity in our unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at ∼Ev + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS we demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.

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References

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