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Short-Circuit Diffusion Processes in Oxidation Films

Published online by Cambridge University Press:  21 February 2011

A.E. Hughes ,
A. Atkinson  and
A.T. Chadwick
A.E. Hughes
Affiliation:
Atomic Energy Research Establishment, Harwell, Didcot, Oxfordshire, OX1l ORA, United Kingdom.
A. Atkinson
Affiliation:
Atomic Energy Research Establishment, Harwell, Didcot, Oxfordshire, OX1l ORA, United Kingdom.
A.T. Chadwick
Affiliation:
Atomic Energy Research Establishment, Harwell, Didcot, Oxfordshire, OX1l ORA, United Kingdom.
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Abstract

The rate of oxidation of metals at high temperatures is usually controlled by the transport of metal ions or oxygen through the growing film of oxide on the surface. Since many technologically useful alloys (eg steels, nickelbased alloys) are based on the 3d transition metals, the transport properties of the oxides of these elements are of particular interest. In the temperature range 500–1000°C, where these alloys are used, the important transport paths in the oxide are not those that involve diffusion in the bulk crystal lattice, but other “short-circuit” paths. Basic experiments on the oxidation of nickel and direct tracer measurements of diffusion coefficients show that rain boundaries are the most important short-circuit paths under protective oxidation conditions. Similar conclusions can be drawn for other metals including chromium. The methods used in this work have been extended to study the way in which a surface treatment with CeO2 reduces the oxidation rate of nickel, apparently by inhibiting the outward transport of metal ions along grain boundaries. Segregation of cerium ions to grain boundaries increases the diffusion coefficient of nickel; the inhibition is caused instead by particulates of CeO2 in the middle region of the scale.

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