Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-15T02:33:32.014Z Has data issue: false hasContentIssue false
  • English
  • Français

Si1-xGex Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525°C

Published online by Cambridge University Press:  21 February 2011

H. Lafontaine,
D.C. Houghton,
B. Bahierathan,
D.D. Perovic and
J.-M. Baribeau
H. Lafontaine
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A OR6 Canada
D.C. Houghton
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A OR6 Canada
B. Bahierathan
Affiliation:
Department of Metallurgy, University of Toronto, 184 College St., Toronto, M5S 3E4 Canada
D.D. Perovic
Affiliation:
Department of Metallurgy, University of Toronto, 184 College St., Toronto, M5S 3E4 Canada
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A OR6 Canada
Get access

Abstract

Several Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Crabbé, E.F., Meyerson, B.S., Stork, J.M.C., and Harame, D.L.. IEDM Tech. Dig. 1993, 83.Google Scholar
2 Kasper, E., Gruhle, A., and Kibbell, H.. IEDM Tech. Dig. 1993, 79.Google Scholar
3 Harame, D. et al. To be presented at IEDM 1995.Google Scholar
4 Meyerson, B.S., Appl. Phys. Lett. 48, 797 (1986).Google Scholar
5 Meyerson, B.S.. Proc. of the IEEE 80, 1592 (1992).Google Scholar
6 Greve, D.W., Racanelli, M.. J. Vac. Sci. Technol. B8, 511 (1990).Google Scholar
7 Lafontaine, H., Houghton, D.C., Elliot, D., Rowell, N.L., Baribeau, J.-M., Laframboise, S., Sproule, G.I., and Rolfe, S.J.. Submitted to J. Vac. Sci. Technol. B. Google Scholar
8 Harame, D.L., Stork, J.M.C., Meyerson, B.S., Hsu, K.Y.-J., Cotte, J., Jenkins, K.A., Cressler, J.D., Restle, P., Crabbé, E.F., Subbanna, S., Tice, T.E., Scharf, B.W., and Yasaitis, J. A.. IEDM Tech. Dig. 1993, 71.Google Scholar
9 Houghton, D. C.. J. Appl. Phys. 70, 2136 (1991).Google Scholar
10 Lafontaine, H., Houghton, D.C., Rowell, N., Aers, G.C., and Rinfret, R.. J. Cryst Growth(in press).Google Scholar
11 Grinfield, M.A. and Srolovitz, D.J.. In Properties of strained and relaxed Silicon Germanium, edited by Kasper, Erich, published by INSPEC, the Institution of Electrical Engineers, London, UK (1995).Google Scholar
12 Srolovitz, D.J., Acta Metall. 37, 621 (1989).Google Scholar
13 Spencer, B.J., Voorhees, P.W., and Davis, S.H.. Phys. Rev. Lett. 67, 3696 (1991).Google Scholar
14 Robbins, D.J., Cullis, A.G., Pidduck, A.J.. J. Vac. Sci. Technol. B9, 2048 (1991)Google Scholar
15 Pidduck, A.J., Robbins, D.J., Cullis, A.G., Leong, W.Y. and Pitt, A.M.. Thin Solid Films 222, 78 (1992).Google Scholar
16 Cullis, A.G., Robbins, D.J., Barnett, S.J., and Pidduck, A.G.. J. Vac. Sci. Technol. A12, 1924 (1994).Google Scholar
17 Tersoff, J. and LeGoues, F.K.. Phys. Rev. Lett. 72, 3570 (1994).Google Scholar
18 Spencer, B.J., Voorhees, P.W., and Davis, S.H.. J. Appl. Phys. 73, 4855 (1993).Google Scholar
19 Perovic, D.D. et al. , submitted to Appl. Phys. Lett. (1995).Google Scholar
20 Schimmel, D.G.. J. Electrochem. Soc. 126, 479 (1979).Google Scholar
21 Baribeau, J.-M.. J. Cryst. Growth (in press).Google Scholar