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SiC Power Electronic Devices, MOSFETs and Rectifiers

Published online by Cambridge University Press:  10 February 2011

J. A. Cooper,
S-H. Ryu,
Y. LI,
M. Matin,
J. Spitz,
D. T. Morisesette,
H. M. McGlothlin,
M. K. Das,
M. R. Melloch and
M. A. Capano
...Show all authors
J. A. Cooper
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
S-H. Ryu
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
Y. LI
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. Matin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
J. Spitz
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
D. T. Morisesette
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
H. M. McGlothlin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. K. Das
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. R. Melloch
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. A. Capano
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
J. M. Woodall
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
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Abstract

SiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.

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References

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