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SiGe RF - Electronic: Devices, Circuits, Competitors, Markets

Published online by Cambridge University Press:  10 February 2011

U. König
U. König*
Affiliation:
Daimler-Benz AG, Research Center Ulm, D-89081 Ulm, Germany
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Abstract

The outstanding performance of the SiGe/Si heterosystem and its compatibility to the dominating Si-technology, opens perspectives for a new generation of high volume microelectronic components, just for communication markets. This paper reviews device and circuit results from experiments and simulations for SiGe HBTs and for SiGe HFETs, and compares those to device results made from competitive materials. Figures of merit considered are gains, transconductances, frequencies, noise, power, delays and bandwidths.

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