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Silicide Formation by Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

L.J. Chen,
W. Lur,
J.F. Chen,
T.L. Lee and
J.M. Liang
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
W. Lur
Affiliation:
United Microelectronics Corporation, Science-Based Park, Hsinchu, Taiwan, Republic of China
J.F. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
T.L. Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J.M. Liang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

An overview of silicide formation by rapid thermal processing is presented. Recent progresses on device applications, phase formation, growth kinetics, thermal stability, epitaxial growth, formation of metastable phase, vacancy ordering in rare-earth silicides and Ti-based shallow junctions involving rapid thermal processing are used as examples to highlight the applications of rapid thermal processing in connection with silicide formation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994, 99
Copyright
Copyright © Materials Research Society 1994

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References

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