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Silicide Formation in High-Dose Fe-Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

Z. Tan,
F. Namavar,
S. M. Heald,
J. I. Budnick and
F. H. Sanchez
Z. Tan
Affiliation:
Division of Applied Physics, Brookhaven National Laboratory, Upton, NY 11973.
F. Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
S. M. Heald
Affiliation:
Division of Applied Physics, Brookhaven National Laboratory, Upton, NY 11973.
J. I. Budnick
Affiliation:
Physics Department and Institute of Materials Science, University of Connecticut, Storrs, CT 06269.
F. H. Sanchez
Affiliation:
Physics Department and Institute of Materials Science, University of Connecticut, Storrs, CT 06269.
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Abstract

We have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but α-FeSi2 appears to be the majority phase. As the dose increases to 7×1017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase P-FeSi2 was obtained independent of the dosage.

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References

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