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Silicide Formation using Laser and Electron Beams

Published online by Cambridge University Press:  15 February 2011

T. W. Sigmon
T. W. Sigmon
Affiliation:
Stanford Electronics Laboratories, Stanford, California, 94305
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Abstract

The reaction of thin metal films with single crystal or amorphous silicon to form silicide compounds has been successfully undertaken using both scanned-cw and pulsed beam processing. Similar to the case for beam annealing of ion-implanted semiconductors, both the basic mechanisms and the experimental results are found to depend on whether pulsed or scanned beams are used to promote the reactions. For both cases the experimental results are often found to differ sharply from those obtained with standard furnace processing. For the pulsed beam reaction, melting and rapid resolidification occurs in the metal silicon films. The principal result is that the reacted film is frozen in a mixed phase compound which can consist of several silicide compounds including silicon and metal precipitation. Compositions inaccessible by conventional furnace annealing can also be formed by this process. In contrast to the pulsed beam results, scanned-cw beam processing of metal silicon films is found to result in the formation of large area uniform silicide phases with essentially no silicon or metal precipitation. These films are generally found to be homogeneous with well defined silicon/silicide interfaces.

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