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Silicon and Nitrogen Dangling Bonds Point Defects in PECVD Silicon Oxynitrides Thin Layers

Published online by Cambridge University Press:  22 February 2011

S. Viscaino,
Y. Cros and
B. Ruf
S. Viscaino
Affiliation:
L.E.P.E.S., C.N.R.S., Assocte à l'Université, J. Fourier, 166X, 38042 Grenoble Cedex - France.
Y. Cros
Affiliation:
L.E.P.E.S., C.N.R.S., Assocte à l'Université, J. Fourier, 166X, 38042 Grenoble Cedex - France.
B. Ruf
Affiliation:
L.E.P.E.S., C.N.R.S., Assocte à l'Université, J. Fourier, 166X, 38042 Grenoble Cedex - France.
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Abstract

New defects were revealed in PECVD SiOxNyHz thin layers upon VUV-illuminations with a deuterium (De) lamp. The ESR signal measured after a 8-hour illumination reached a saturated amplitude one or two decades higher than the dark ESR signal. The dark ESR signal level was recovered after a 3-hour anneal at 380°C. In addition to the silicon dangling bonds already identified in the dark ESR, the bridging nitrogen dangling bonds and over-coordinated nitrogen were identified after VUV-radiations. The relative densities of the various kinds of defect are given as a function of the O/O+N oxynitride composition.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992, 339
Copyright
Copyright © Materials Research Society 1993

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