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Silicon Crystallization from Annealed Cu/A-Si:H Bilayers: AMultitechnique Study

Published online by Cambridge University Press:  15 February 2011

C. A. Achete,
L. Bernardino,
F. L. Freire Jr,
G. Mariotto and
H. Niehus
C. A. Achete
Affiliation:
PEMM, COPPE, Universidade Federal do Rio de Janeiro, 21910, Rio de Janeiro, RJ, Brazil
L. Bernardino
Affiliation:
PEMM, COPPE, Universidade Federal do Rio de Janeiro, 21910, Rio de Janeiro, RJ, Brazil
F. L. Freire Jr
Affiliation:
Dipartimento di Fisica, Università di Trento, 38050, Povo (TN), Italy
G. Mariotto
Affiliation:
Dipartimento di Fisica, Università di Trento, 38050, Povo (TN), Italy
H. Niehus
Affiliation:
ICV/Forschungszentrum, Jülich, Federal Republic of, Germany
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Abstract

Silicon crystallization has been observed to occur in copper/a-Si:H thinfilm bilayers annealed at 280 °C. Copper-silicide formation was observedafter annealing at 200 °C. Samples characterization was made by acombination of several analytical techniques: scanning electron Microscopy,Raman spectroscopy through a microscope probe, Auger electron spectroscopy,elastic recoil detection analysis and Rutherford backscatteringspectrometry. The possible role of hydrogen in this process isdiscussed.

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