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Silicon Devices Fabricated by Using Laser Irradiation Process

Published online by Cambridge University Press:  15 February 2011

M. Tamura,
N. Natsuaki,
M. Miyao,
M. Ohkura,
F. Murai,
E. Takeda,
S. Minagawa and
T. Tokuyama
M. Tamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
N. Natsuaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Ohkura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
F. Murai
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
E. Takeda
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
S. Minagawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

The advantages and disadvantages of both pulsed and cw scanned laser processing for Si devices are discussed. In particular, adaptions of laser processes for MOSFETs and bipolar structures are described from the viewpoint of active layer annealing. Moreover, MOSFETs fabricated in laser induced grown Si films on Si substrates having SiO2 patterns by bridging epitaxy, are discussed, as a function of sample structures, film formation conditions and laser irradiation conditions.

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References

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