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Silicon Oxidation by Rapid Thermal Processing (RTP)

Published online by Cambridge University Press:  26 February 2011

A. M. Hodge,
C. Pickering,
A. J. Pidduck and
R. W. Hardeman
A. M. Hodge
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, UK
C. Pickering
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, UK
A. J. Pidduck
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, UK
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Abstract

Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985, 313
Copyright
Copyright © Materials Research Society 1986

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