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Silicon Single Electron Transistors with Single and Multi Dot Characteristics

Published online by Cambridge University Press:  17 March 2011

Alexander Savin,
Antti Manninen,
Jari Kauranen,
Jukka Pekola,
Mika Prunnila,
Jouni Ahopelto,
Martin Kamp,
Monika Emmerling and
Alfred Forchel
Alexander Savin
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Antti Manninen
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Jari Kauranen
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Jukka Pekola
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Mika Prunnila
Affiliation:
VTT Microelectronics Centre, P.O.Box 1101, FIN-02044 VTT, Finland
Jouni Ahopelto
Affiliation:
VTT Microelectronics Centre, P.O.Box 1101, FIN-02044 VTT, Finland
Martin Kamp
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Monika Emmerling
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Alfred Forchel
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
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Abstract

Silicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics of the SETs and the relaxation process. Telegraph noise has been observed in a definite range of source-drain and gate voltages.

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