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Silicon Surface Passivation for Heteroepitaxy by Hydrogen Termination

Published online by Cambridge University Press:  25 February 2011

D.B. Fenner,
D.K. Biegelsen,
R.D. Bringans and
B.S. Krusor
D.B. Fenner
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.Physics Dept., Santa Clara Univ., Santa Clara, CA 95053.
D.K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
R.D. Bringans
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
B.S. Krusor
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
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Abstract

Results are reported for XPS and LEED evaluations of Si(100) wafers cleaned, etched, andhydrogen terminated by various low — temperature, wet — chemical techniques. We have obtained especially promising results with the JPL spin — etch technique. Under quite practical tolerances for the spin etch, our XPS measurements indicate about lx10-2 monolayer (ML) of total residue. The LEED showed sharp spots in a (1x1) pattern. We review our experimental results and suggest an interpretation in termsof both the chemistry of silicon surfaces in contact with HF in a polar solvent, and thehydrodynamics of liquids on spinning surfaces.

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