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Silicon-Based Optoelectronics

Published online by Cambridge University Press:  10 February 2011

Ch. Buchal ,
M. Löken  and
M. Siegert
Ch. Buchal
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany c.buchal@fz-juelich.de, (+ 49) 24 61/61-44 31, -46 73
M. Löken
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany c.buchal@fz-juelich.de, (+ 49) 24 61/61-44 31, -46 73
M. Siegert
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany c.buchal@fz-juelich.de, (+ 49) 24 61/61-44 31, -46 73
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Abstract

The potential of silicon-based designs for various optoelectronic functions is discussed. Sibased light detectors are the most advanced, especially in the form of metal-Si-metal (MSM) photodetectors. They use Si band to band absorption for visible light and Schottky-barrier emission for the infrared (IR). The different light sources show rapid progress, but still face challenges to reach a quantum efficiency of 10−2. In addition to the intrinsic silicon based designs, some new Si breadboard concepts are shown: especially for waveguides, modulators and all-optical amplifiers, it may be advantageous to add entirely different materials (polymers, glasses, BaTiO3 or Al2O3) onto the Si wafer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

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