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Silver Patterning by Reactive Ion Beam Etching forMicroelectronics Application

Published online by Cambridge University Press:  17 March 2011

L. Gao,
J. Gstoettner,
R. Emling,
P. Wang,
W. Hansch and
D. Schmitt-Landsiedel
L. Gao
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
J. Gstoettner
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
R. Emling
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
P. Wang
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
W. Hansch
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
D. Schmitt-Landsiedel
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
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Abstract

Dry etching of silver for the metallization in microelectronics isinvestigated. Etching is performed using an electron-cyclotron-resonancereactive-ion-beam-etching system (ECR-RIBE) in an Ar/CF4 or Ar/CF4/O2 mixture. The etch characteristics arestrongly affected by ion energy (beam voltage and microwave energy); the O2 concentration in the reactive mixture has only a smalleffect. An anisotropic, smooth etch profile and clean surface are obtained.Focused ion beam (FIB) and atomic force microscopy (AFM) have been used tostudy the etched profile and the roughness, respectively.

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