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Simulation Study of Copper Cluster Deposition

Published online by Cambridge University Press:  21 March 2011

Jin C. Kang,
Jeong W. Kang and
Ho J. Hwang
Jin C. Kang
Affiliation:
Semiconductor Process and Devices Laboratory, Department of Electronic Engineering, Chung-Ang University, 221 HukSuk-Dong, DongJak-Ku, Seoul 156-756, Korea
Jeong W. Kang
Affiliation:
Semiconductor Process and Devices Laboratory, Department of Electronic Engineering, Chung-Ang University, 221 HukSuk-Dong, DongJak-Ku, Seoul 156-756, Korea
Ho J. Hwang
Affiliation:
Semiconductor Process and Devices Laboratory, Department of Electronic Engineering, Chung-Ang University, 221 HukSuk-Dong, DongJak-Ku, Seoul 156-756, Korea
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Abstract

The ionized cluster beam deposition of Al and Cu clusters has been investigated with a classical molecular dynamics simulation and the Metropolis Monte Carlo simulation. The spreading of the cluster has been studied as functions of cluster size and initial cluster energy. When the local area reached local melting spot on the surface, around the impact point of an energetic cluster, during a few ps, intermixing was easily achieved and a good epitaxial film with optimum bulk density was formed. For uniform film growth using cluster impact, it is necessary to make the local area temperature higher than melting temperature on the surface around the impact point of an energetic cluster.

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