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Single Wafer Rapid Thermal Multiprocessing

Published online by Cambridge University Press:  25 February 2011

Krishna C. Saraswat ,
Mehrdad M. Moslehi ,
David D. Grossman ,
Sam Wood ,
Peter Wright  and
Len Booth
Krishna C. Saraswat
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA, 94305
Mehrdad M. Moslehi
Affiliation:
Currently at Texas Instruments, Dallas
David D. Grossman
Affiliation:
SRC/CIS visitor at Stanford, on leave from IBM Research Ctr., Yorktown Heights, New York
Sam Wood
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA, 94305
Peter Wright
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA, 94305
Len Booth
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA, 94305
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Abstract

Future success in microelectronics will demand rapid innovation, rapid product introduction and ability to react to a change in technological and business climate quickly. These technological advances in integrated electronics will require development of flexible manufacturing technology for VLSI systems. However, the current approach of establishing factories for mass manufacturing of chips at a cost of more than 200 million dollars is detrimental to flexible manufacturing. We propose concepts of a micro factory which may be characterized by more economical small scale production, higher flexibility to accommodate many products on several processes, and faster turnaround and learning. In-situ multiprocessing equipment where several process steps can be done in sequence may be a key ingredient in this approach. For this environment to be flexible, the equipment must have ability to change processing environment, requiring extensive in-situ measurements and real time control. In this paper we describe the development of a novel single wafer Rapid Thermal Multiprocessing (RTM) reactor for next generation flexible VLSI manufacturing. This reactor will combine lamp heating, remote microwave plasma and photo processing in a single cold-wall chamber, with applications for multilayer in-situ growth and deposition of dielectrics, semiconductors and metals.

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References

REFERENCES

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