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Single-Crystal Aluminum Nitride Substrate Preparation from Bulk Crystals

Published online by Cambridge University Press:  21 March 2011

J. Carlos Rojo,
Leo J. Schowalter,
Kenneth Morgan,
Doru I. Florescu,
Fred H. Pollak,
Balaji Raghothamachar and
Michael Dudley
J. Carlos Rojo
Affiliation:
Crystal IS, Inc., Latham, NY 12110
Leo J. Schowalter
Affiliation:
on sabbatical from the Physics, Applied Physics and Astronomy Dept., Rensselaer Polytechnic Institute, Troy, NY 12180
Kenneth Morgan
Affiliation:
Crystal IS, Inc., Latham, NY 12110
Doru I. Florescu
Affiliation:
Brooklyn College, Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Brooklyn College, Brooklyn, NY 11210
Balaji Raghothamachar
Affiliation:
SUNY, Stony Brook, NY 11794
Michael Dudley
Affiliation:
SUNY, Stony Brook, NY 11794
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Abstract

Large (15mm diameter) single-crystal AlN boules have been prepared using sublimationrecondensation growth. X-ray topography shows that the dislocation density averages less than 103 cm2 in some of the substrates but also that the dislocations are not uniformly distributed. Also, strain due to the differential expansion with the crucible walls seems to cause severe cracking in the periphery of the crystal and high-strain regions. Thermal analysis using the Scanning Thermal Microscopy (SThM) reveals a thermal conductivity of 3.4 ± 0.2 W/K-cm, which is the largest value ever reported for AlN.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001, E2.7
Copyright
Copyright © Materials Research Society 2001

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References

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