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The SiO2/Si Interface Probed With Positrons

Published online by Cambridge University Press:  22 February 2011

Bent Nielsen,
K. G. Lynn,
T. C. Leung,
D. O. Welch and
G. Rubloff
Bent Nielsen
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
K. G. Lynn
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973Physics Department, Brookhaven National Laboratory, Upton, NY 11973
T. C. Leung
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton, NY 11973
D. O. Welch
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
G. Rubloff
Affiliation:
IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The effects of the heat treatment of Si covered with a thermally-grown ˜50 nm overlayer of SiO2 were probed by means of measurements of positron annihilation characteristics obtained with a variable-energy positron beam. From measurements at elevated temperature (˜500°C) it was observed that positrons implanted overlapping the SiO2/Si interface decay from a state with properties distinctively different from the state in Si and in SiO2. The nature of the annihilation characteristics indicates the presence of open volume defects.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987, 241
Copyright
Copyright © Materials Research Society 1988

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