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Sol-Gel Thin Film Electronic Properties

Published online by Cambridge University Press:  28 February 2011

W. L. Warren,
P. M. Lenahan,
C. J. Brinker,
G. R. Shaffer,
C. S. Ashley and
S. T. Reed
W. L. Warren
Affiliation:
The Pennsylvania State University, University Park, PA 16802
P. M. Lenahan
Affiliation:
The Pennsylvania State University, University Park, PA 16802
C. J. Brinker
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
G. R. Shaffer
Affiliation:
The Pennsylvania State University, University Park, PA 16802
C. S. Ashley
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. T. Reed
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We have explored the effects of various processing parameters on the dielectric andelectronic integrity of sol-gel derived silicate thin films and have identified several factors that strongly affect the thin film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown SiO2 film on Si.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 180: Symposium A – Better Ceramics Through Chemistry IV , 1990, 413
Copyright
Copyright © Materials Research Society 1990

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References

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