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Solute Binding at Void Surfaces in Silicon and germanium

Published online by Cambridge University Press:  28 February 2011

S. M. Myers,
D. M. Bishop,
D. M. Follstaedt,
H. J. Stein and
W. R. Wampler
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
D. M. Bishop
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
H. J. Stein
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

The strongly exothermic reactions of H and Cu with internal surfaces in Si and Ge were examined in experiments employing ion implantation, ion-beam analysis, transmission electron microscopy, and infrared spectroscopy. The dissociation energy of the Si-H surface bond was determined to be 2.6±0.1 eV, so that the monohydride is more stable than molecular H2, whose dissociation energy per atom is 2.26 eV. Initial experiments indicate a dissociation energy for the Ge-H surface bond of =1.9 eV. Copper is bound to the Si surface with an energy of 2.2±0.2 eV relative to solid solution, as compared to a reported binding energy of 1.5 eV for Cu in the precipitated Cu3Si phase.

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References

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