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Solution Delivery for Copper CVD Using Cu(HFAC)2 Reduction

Published online by Cambridge University Press:  10 February 2011

C. Zeng,
N. S. Borgharkar,
G. L. Griffin,
H. Fan and
A. W. Maverick
C. Zeng
Affiliation:
Department of Chemical Engineering, Louisiana State University, Baton Rouge, LA 70803
N. S. Borgharkar
Affiliation:
Department of Chemical Engineering, Louisiana State University, Baton Rouge, LA 70803
G. L. Griffin
Affiliation:
Department of Chemical Engineering, Louisiana State University, Baton Rouge, LA 70803
H. Fan
Affiliation:
Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803
A. W. Maverick
Affiliation:
Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803
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Abstract

We have developed a solution delivery technique for performing copper CVD using the reduction of Cu(hfac)2 [where H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionel. We have obtained deposition rates of up to 3.6 mg cm−2 hr−1 (ca. 60 nm min−1) for a deposition temperature of 300 °C and reactor conditions of 40 Torr H2, 12 Torr isopropanol, and 1 Torr Cu(hfac)2. The increased rates are several times faster than growth rates observed using conventional Cu(hfac)2 sublimation with pure H2 as the carrier gas. We compare growth rates and film microstructure using TiN- and WNx-coated substrates. We also give preliminary results showing how the partial pressures of H2, i-PrOH, and Cu(hfac)2 each influence the deposition rate.

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References

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