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Space-Charge-Enhanced Post-Transit-Currents in A-Si:H

Published online by Cambridge University Press:  16 February 2011

F. Schauer,
A. Eliat,
M. Nesládek,
G.J. Adriaenssens and
L.M. Stals
F. Schauer
Affiliation:
Department of Physics, Chemical Faculty, Technical University of Brno, Žižkova 17, Brno CS-60200, Czech Republic
A. Eliat
Affiliation:
Laboratorium voor Halfgeleiderfysica, K.U. Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Belgium
M. Nesládek
Affiliation:
Material Physics Division, Institute for Materials Research, Limburg University Centre, Campuslaan, B-3590 Diepenbeek, Belgium
G.J. Adriaenssens
Affiliation:
Laboratorium voor Halfgeleiderfysica, K.U. Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Belgium
L.M. Stals
Affiliation:
Material Physics Division, Institute for Materials Research, Limburg University Centre, Campuslaan, B-3590 Diepenbeek, Belgium
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Abstract

The space-charge-limited current mode in the post-transit time-of-flight method was used to determine the density of states (DOS) in the band gap of a-Si:H. SCLC conditions result in an enhancement of the occupancy of deep states, leading consequently to an improved sensitivity. In comparison with the small signal case, the emission time of deep traps changes as a function of the time dependent occupancy of traps. The change in the emission time of traps is explained by consideration of the deep defect relaxation concept.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994, 443
Copyright
Copyright © Materials Research Society 1994

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References

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