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Spatial-Resolution Limits of Laser Patterning: Submicrometer Projection Microchemistry†

Published online by Cambridge University Press:  21 February 2011

D. J. Ehrlich and
J. Y. Tsao
D. J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–0073
J. Y. Tsao
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–0073
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Abstract

The predictions of a simple two-dimensional model for the sensitivity to process contrast of direct-write and projection laser microchemistry are reviewed. Microchemical reactions excited by UV image projection are demonstrated using a 30X reduction reflecting system and excimer laser illumination. Well-resolved images with submicrometer features are obtained by: (1) reaction of an Al/O cermet, (2) projection doping of Si in BCl3,(3) projection etching of Pyrex glass in H2, and (4) reactive patterning of an organic bilayer. Linewidths of 0.5 – 0.2 μm have been demonstrated for projection imaging in these systems.

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Footnotes

†

This work was supported by the Department of the Air Force, in part under a specific program sponsored by the Air Force Office of Scientific Research, by the Defense Advanced Research Projects Agency, and by the Army Research Office.

References

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