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Special Aspects of Diffusion in Metallic Thin Films

Published online by Cambridge University Press:  22 February 2011

D. Gupta
D. Gupta*
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
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Abstract

The diffusion processes in thin films are largely controlled by their microstructure and chemistry. In this publication, we discuss briefly how the recently devel-oped experimental techniques coupled with the available analytical treatments have been able to characterize these processes. Actually a hierarchy of diffusion rates along the atomic defects in thin films, namely the vacancies, grain-boundaries and dislocations, has been found. The interactions of solutes present in thin films with the atomic defects in altering the diffusion rates are discussed. It has also been possible to measure diffusion in amorphous metallic alloy films and its features are described. Finally, we outline the general principles for modifying diffusion in thin films to achieve the desired technological objectives.

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