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Stabilized Pd-alloy/AlN/Si Hydrogen Sensors

Published online by Cambridge University Press:  01 February 2011

Linfeng Zhang,
Ibrahim Al-Homoudi,
Md H. Rahman,
Erik F. McCullen,
Lajos Rimai,
Ronald J. Baird,
Ratna Naik,
Golam Newaz,
Gregory W. Auner and
K.Y. Simon Ng
Linfeng Zhang
Affiliation:
Department of Electrical and Computer Engineering
Ibrahim Al-Homoudi
Affiliation:
Department of Mechanical Engineering
Md H. Rahman
Affiliation:
Department of Chemical Engineering and Material Science
Erik F. McCullen
Affiliation:
Department of Electrical and Computer Engineering
Lajos Rimai
Affiliation:
Department of Electrical and Computer Engineering
Ronald J. Baird
Affiliation:
Department of Electrical and Computer Engineering
Ratna Naik
Affiliation:
Department of Physics and Astronomy Wayne State University, Detroit, MI 48202
Golam Newaz
Affiliation:
Department of Mechanical Engineering
Gregory W. Auner
Affiliation:
Department of Electrical and Computer Engineering
K.Y. Simon Ng
Affiliation:
Department of Chemical Engineering and Material Science
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Abstract

In order to extend the dynamic range of a hydrogen sensor with a metal-insulator-semiconductor (MIS) type structure, Pd-Cr and Pd-Ni alloy gated samples were studied. The PdCr gated sample shows quite stable and reproducible response, and could measure hydrogen concentrations from 100 to 50, 000 ppm. While the Pd-Ni gated sample shows turn-on/off response drift, this drift is probably due to the presence of oxygen on the surface of the insulator and the formation of metal hydride. Furthermore, the effect of oxygen on the sensors response was investigated; oxygen may deplete protons from the metal/insulator interface and could reduce the sensor's response.

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References

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