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Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

Published online by Cambridge University Press:  21 February 2011

E. Kolawa,
C. W. Nieh,
W. Flick,
J. Molarius and
M-A. Nicolet
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
C. W. Nieh
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
W. Flick
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
J. Molarius
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
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Abstract

Contacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

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References

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