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Stacking Fault Energies in TiCx

Published online by Cambridge University Press:  10 February 2011

R. M. Harris and
P. D. Bristowe
R. M. Harris
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
P. D. Bristowe
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
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Abstract

We have used a Tight Binding model to calculate the surface energies of various (111) stacking faults in TiC1.0 and TiC0.5. Based upon our preliminary results we have identified the stable stacking faults and have examined possible dislocation dissociation reactions.

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References

REFERENCES

1. Chien, F.R., Ning, X.J. and Heuer, A.H., Acta mater. 44 (1996), p. 2265 Google Scholar
2. Tsurekawa, S. and Yoshinaga, H., J. Japan Inst. Metals 58 (1994), p. 390 Google Scholar
3. See, for example, Harrison, W.A., Electronic structure and the properties of solids, DoverGoogle Scholar
4. Tan, K.E., Bratkovsky, A.M., Harris, R.M., Horsfield, A.P., Nguyen-Manh, D., Pettifor, D.G. and Sutton, A.P., Modelling and Simulation in Materials Science and Engineering, submittedGoogle Scholar
5. Vitek, V., Phil. Mag. 18 (1968), p. 773 Google Scholar
6. Frank, F.C. and Nicholas, J.F., Phil. Mag. 44 (1953), p. 1213 Google Scholar
7. Kelly, A. and Rowcliffe, D.J., Phys. Stat. Sol. 14 (1966) p. K29 Google Scholar
8. Harris, R.M., Horsfield, A.P. and Bristowe, P.D., in preparationGoogle Scholar