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Steps on (001) Si Surfaces

Published online by Cambridge University Press:  28 February 2011

D. E. Aspnes and
J. Ihm
D. E. Aspnes
Affiliation:
Bell Communications Research, Inc., Red Bank, N.J. 07701–7020
J. Ihm
Affiliation:
Physics Department, Seoul National University, Seoul, Korea
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Abstract

Primitive (001) surfaces contain only biatomic (ao/2) steps and thereby provide a topological way of suppressing antiphase domain formation in polar materials heteroepitaxially grown on nonpolar (001) substrates. We show that thermodynamic equilibrium is a necessary and sufficient condition to form primitive (001) Si surfaces due to a π-bonded step reconstruction that lowers the relative enthalpy of reconstructed [110] biatomic steps by 0.04 eV per step atom, and to correlation, which freezes out the step configurational entropy thereby suppressing the formation of all other types of steps. Implications for general vicinal (001) Si surfaces are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987, 45
Copyright
Copyright © Materials Research Society 1987

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References

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