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Strain compensation effect on stacked InAs self-assembled quantum dots embedded in GaNAs layers

Published online by Cambridge University Press:  01 February 2011

Ryuji Oshima,
Takayuki Hashimoto,
Hidemi Shigekawa and
Yoshitaka Okada
Ryuji Oshima
Affiliation:
bk981495@s.bk.tsukuba.ac.jp, Institute of Apllied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 306-8573, Japan, +81-29-853-6902, +81-29-853-6902
Takayuki Hashimoto
Affiliation:
bk200101471@s.bk.tsukuba.ac.jp, Institute of Applied Physics, University of Tsukuba, Japan
Hidemi Shigekawa
Affiliation:
hidemi@ims.tsukuba.ac.jp, Institute of Applied Physics, University of Tsukuba, Japan
Yoshitaka Okada
Affiliation:
okada@ims.tsukuba.ac.jp, Institute of Applied Physics, University of Tsukuba
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Abstract

We have studied the effect of strain compensation in multiple stacking of InAs self-assembled quantum dots on GaAs (001) substrates grown by atomic hydrogen assisted RF-molecular beam epitaxy. The GaNx As1−x material was used as a strain compensating spacer layer. We confirmed by high resolution x-ray diffraction measurements that a 40 nm GaN0.005As0.995 strain compensating layer provides compressive strain to compensate for tensile strain induced by 2.0 ML InAs quantum dots. Consequently, we achieved a multiple stack of InAs QDs up to 30 layers without formation of coalesced QDs, and the density of QDs exceeded 1012 cm−2.

Keywords

self-assemblymolecular beam epitaxy (MBE)semiconducting

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References

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