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Strain Effects in GaN on Sapphire: Towards a Quantitative Comprehension

Published online by Cambridge University Press:  21 February 2011

O. Briot,
J.P. Alexis,
B. Gil and
R.L. Aulombard
O. Briot
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
J.P. Alexis
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
B. Gil
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
R.L. Aulombard
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
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Abstract

We present here a detailed investigation of the optical properties of GaN epilayers grown by low pressure MOVPE on sapphire substrates, using 2K photoluminescence as well as 2K reflectance spectroscopy. A large series of samples has been grown under eclectic conditions (V/III ratio, growth temperature, nitridation steps,...) which allows us to propose the first semi-quantitative investigation of the sample-dependent band gap energies. This dependence of the bandgap is analyzed in terms of i) residual stress, ii) exciton parameters and iii) deformation potential characteristics of the A, B, C excitons. the residual stress cannot be simply explained in terms of the differences between the thermal expansion coefficients of the various compounds, but are strongly correlated to the V/III growth ratio imposed during the growth, and subsequently to the influence of this parameter at the scale of electronic and structural characteristics of the deposited layers.

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References

REFERENCES

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