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Stress, Microstructure, and Thermal Behavior in Mo/Si X-Ray Multilayers

Published online by Cambridge University Press:  15 February 2011

Tai D. Nguyen and
James H. Underwood
Tai D. Nguyen
Affiliation:
currently at the National Center for Electron Microscopy, Lawrence Berkeley Laboratory.
James H. Underwood
Affiliation:
Center for X-Ray Optics, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720.
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Abstract

The relationship between intrinsic stress and microstructural evolution in nanometer Mo/Si multilayers deposited by magnetron sputtering at low working pressure (2.5 mTorr) is studied. The stress depends strongly on the microstructure which evolves with the multilayer period. In-situ thermal stress measurements show stress relaxation is observed in Mo/Si multilayers after annealing at 300°C in nitrogen ambient, due to microstructural changes in the multilayers. Average stress exhibits changes after annealing at 500°C which correspond to increased interdiffusion between the layer materials and crystallization at the interfaces.

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